Method of manufacturing semiconductor device and semiconductor device
US10741505B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2019 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Jan 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes stacking a first substrate comprising a first surface having a semiconductor element and an opposing second surface and a second substrate comprising a third surface having a semiconductor element and an opposing fourth surface, forming a first contact hole extending from the second surface to the first surface of the first substrate and forming a first groove inwardly of a first region of the second surface of the first substrate by etching inwardly of the first substrate from the second surface thereof, forming a first patterned mask on the first substrate, so that the first groove is covered by the material of the first patterned mask, forming a first metal electrode in the first contact hole through an opening in the first mask as a mask, and removing the first mask and subsequently cutting through the first substrate in the first groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.