Spacer for trench epitaxial structures

US10741559B2 · kind B2 · utility

Assignee

• Elpis Technologies Inc. · CA

Inventors

• Injo Ok · Lockport, US
• Balasubramanian Pranatharthiharan · Watervliet, US
• Soon-Cheon Seo · White Plains, US
• Charan V. V. S. Surisetty · Clifton Park, US

Key dates

• Filing date: May 28, 2019
• Grant date: Aug 11, 2020
• Expiry date: May 28, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

The disclosure relates to a structure and methods of forming spacers for trench epitaxial structures. The method includes: forming a spacer material between source and drain regions of respective first-type gate structures and second-type gate structures; growing source and drain material about the first-type gate structures, confined within an area defined by the spacer material; and growing source and drain material about the second-type gate structures, confined within an area defined by the spacer material.