Semiconductor memory device
US10741580B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2019 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Mar 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device comprises: a substrate; a first conductive layer and a second conductive layer arranged in a first direction crossing a surface of the substrate and extending in a second direction crossing the first direction, the first conductive layer being closer to the substrate than the second conductive layer, a length in the second direction of the first conductive layer being greater than the length of the second conductive layer; a first semiconductor film extending in the first direction and facing the first and second conductive layers; a second semiconductor film interposed between ends of the first and second conductive layers, extending in the first direction, and facing the first conductive layer; a first wiring farther from the substrate than the first semiconductor film and being electrically connected to the first semiconductor film; and a second wiring farther from the substrate than the second semiconductor film and being electrically connected to the second semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.