Wrap-around-contact structure for top source/drain in vertical FETs
US10741652B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2019 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Sep 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is presented for forming a wrap-around-contact. The method includes forming a bottom source/drain region adjacent a plurality of fins, disposing encapsulation layers over the plurality of fins, recessing at least one of the encapsulation layers to expose top portions of the plurality of fins, and for forming top spacers adjacent the top portions of the plurality of fins. The method further includes disposing a sacrificial liner adjacent the encapsulation layers, recessing the top spacers, forming top source/drain regions over the top portions of the plurality of fins, removing the sacrificial liner to create trenches adjacent the top source/drain regions, and depositing a metal liner within the trenches and over the top source/drain regions such that the wrap-around-contact is defined to cover an upper area of the top source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.