Semiconductor devices having a fin channel arranged between source and drift regions and methods of manufacturing the same

US10741685B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Robert J. Gauthier, Jr. · South Burlington, US
• Souvick Mitra · South Burlington, US
• Alain Loiseau · Williston, US
• Tsai Tsung-Che · South Burlington, US
• Mickey H. Yu · South Burlington, US
• You Li · South Burlington, US

Key dates

• Filing date: Sep 21, 2018
• Grant date: Aug 11, 2020
• Expiry date: Sep 21, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/151

Abstract

Structures for laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices, as well as methods of forming laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices. A gate electrode is arranged to extend about a semiconductor fin projecting from a substrate. A drain region is arranged in the substrate, and a source region is coupled with the semiconductor fin. The source region is arranged over the semiconductor fin. A drift region is arranged in the substrate between the drain region and the semiconductor fin. The drain region, source region, and drift region have a given conductivity type. The drift region has a lower electrical conductivity than the drain region.