Conductive hard mask for memory device formation
US10741753B2 · kind B2 · utility
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76References
16Claims
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Assignee
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Key dates
| Filing date | Aug 14, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Aug 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/24
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.