Michael J. Bernhardt
20Patents
4h-index
12Co-inventors
56Inventor score
Filing activity: Mar 22, 2011 → Jul 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9337366B2 | Textured optoelectronic devices and associated methods of manufacture | Emerging Cross-Sectional Technologies | 6 | Active |
| US9704923B1 | Dual-layer dielectric in memory device | Electricity | 5 | Active |
| US8802461B2 | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing | Electricity | 5 | Active |
| US10629652B2 | Dual-layer dielectric in memory device | Electricity | 4 | Active |
| US9455386B2 | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing | Electricity | 4 | Active |
| US9842976B2 | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing | Electricity | 3 | Active |
| US9923139B2 | Conductive hard mask for memory device formation | Electricity | 3 | Active |
| US10756236B2 | Textured optoelectronic devices and associated methods of manufacture | Emerging Cross-Sectional Technologies | 2 | Active |
| US10084114B2 | Textured optoelectronic devices and associated methods of manufacture | Emerging Cross-Sectional Technologies | 2 | Active |
| US9608202B1 | Provision of structural integrity in memory device | Electricity | 1 | Active |
| US11211537B2 | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing | Electricity | 1 | Active |
| US10644211B2 | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing | Electricity | 1 | Active |
| US10103326B2 | Conductive hard mask for memory device formation | Electricity | 1 | Active |
| US11411139B2 | Textured optoelectronic devices and associated methods of manufacture | Emerging Cross-Sectional Technologies | 1 | Active |
| US11742458B2 | Textured optoelectronic devices and associated methods of manufacture | Emerging Cross-Sectional Technologies | 1 | Active |
| US10134809B2 | Dual-layer dielectric in memory device | Electricity | 1 | Active |
| US12283644B2 | Textured optoelectronic devices and associated methods of manufacture | Emerging Cross-Sectional Technologies | 0 | Active |
| US10741753B2 | Conductive hard mask for memory device formation | Electricity | 0 | Active |
| US10607695B2 | Provision of structural integrity in memory device | Electricity | 0 | Active |
| US12170348B2 | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.