Method for depositing a silicon nitride film and film deposition apparatus
US10748758B2 · kind B2 · utility
0Cited by
8References
17Claims
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Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Aug 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.