Method of manufacturing semiconductor device
US10748782B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2018 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Oct 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of manufacturing a semiconductor device by processing a substrate, which includes: embedding a polymer having a urea bond in a recess formed in the substrate by supplying a material for polymerization from above a sacrificial film to the substrate and forming a polymer film made of the polymer having the urea bond, wherein a surface of the substrate is covered with the sacrificial film, the recess including an opening of the sacrificial film that is formed by a patterning; removing the polymer film formed on the sacrificial film while leaving the polymer embedded in the recess; removing the sacrificial film in a state in which the polymer is embedded in the recess; and subsequently, removing the polymer embedded in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.