Etching method and plasma processing apparatus
US10755944B2 · kind B2 · utility
1Cited by
1References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 7, 2018 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Dec 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An etching method selectively etches a first region of a substrate with respect to a second region of the substrate. At least a portion of the first region, which includes the surface of the first region, is modified by plasma to form a first modified region. At least a portion of the second region, which includes the surface of the second region, is modified by plasma to form a second modified region. The first modified region is selectively etched with respect to the second modified region by plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.