Method of manufacturing semiconductor device
US10755971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2019 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Sep 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.