Integrated circuit device and method of fabricating integrated circuit
US10756128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2019 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Jan 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.