Three-dimensional memory device including germanium-containing vertical channels and method of making the same
US10756186B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2018 |
| Grant date | Aug 25, 2020 |
| Priority date | — |
| Expiry date | Jul 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. The sacrificial material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory openings are formed through the alternating stack. A memory film is formed within each memory openings. A silicon-germanium alloy layer including germanium at an atomic concentration less than 25% is deposited within each memory opening. An oxidation process is performed on the silicon-germanium alloy layer. A vertical semiconductor channel including an unoxidized remaining material portion of the silicon-germanium alloy layer is formed, which includes germanium at an atomic concentration greater than 50%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.