Plasma processing apparatus
US10763087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2018 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Feb 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.