Method of manufacturing semiconductor device and etching mask
US10763122B2 · kind B2 · utility
0Cited by
13References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2017 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Sep 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.