Fabrication of gate all around device
US10763337B2 · kind B2 · utility
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11References
20Claims
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Key dates
| Filing date | Jun 17, 2019 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Jun 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/122
Abstract
A method of forming a gate-all-around device includes forming a gate electrode layer over a substrate, patterning the gate electrode layer to form a conical frustum-shaped gate electrode, etching the conical frustum-shaped gate electrode to form a through hole extending through top and bottom surfaces of the conical frustum-shaped gate electrode, and after etching the conical frustum-shaped gate electrode, forming a nanowire in the through hole in the conical frustum-shaped gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.