Effective junction formation in vertical transistor structures by engineered bottom source/drain epitaxy
US10763343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2019 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Mar 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical transistor structure is provided that includes a bottom source/drain structure that includes a doped semiconductor buffer layer that contains a first dopant species having a first diffusion rate, and an epitaxial doped semiconductor layer that contains a second dopant species that has a second diffusion rate that is less than the first diffusion rate. During a junction anneal, the first dopant species readily diffuses from the doped semiconductor buffer layer into a pillar portion of a base semiconductor substrate to provide the bottom source/drain extension and bottom source/drain junction. No diffusion overrun is observed. During the junction anneal, the second dopant species remains in the epitaxial doped semiconductor layer providing a low resistance contact. The second dopant species does not interfere with the bottom source/drain extension and bottom source/drain junction due to limited diffusion of the second dopant species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.