Semiconductor device
US10763352B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 31, 2018 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Sep 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type having first and second surfaces and an impurity concentration distribution in a first direction from the second surface to the first surface, a first semiconductor region of a second conductivity between the semiconductor layer and the first surface, a second semiconductor region of a first conductivity type between the first semiconductor region and the first surface side, a first trench extending from the first surface into the semiconductor layer, a first electrode located in the first trench over a first insulating film and spaced from the first semiconductor region by a first insulating film, a second electrode located in the first trench over a second insulating film, a second trench extending from the first surface into the semiconductor layer and surrounding the first trench, and a third electrode located in the second trench over a third insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.