Patent · US Active

Resist solvents for photolithography applications

US10768527B2 · kind B2 · utility

1Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 13, 2018
Grant dateSep 8, 2020
Priority date
Expiry dateDec 7, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0276
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method includes providing a photoresist solution that includes a first solvent having a first volume and a second solvent having a second volume, where the first solvent is different from the second solvent and where the first volume is less than the second volume; dispersing the photoresist solution over a substrate to form a film, where the dispersing evaporates a portion of the first solvent and a portion of the second solvent such that a remaining portion of the first solvent is greater than a remaining portion of the second solvent; baking the film; after baking the film, exposing the film to form an exposed film; and developing the exposed film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.