Patent · US Active

Features for improving process uniformity in a millisecond anneal system

US10770309B2 · kind B2 · utility

0Cited by

7References

10Claims

0Family size

Assignees

Mattson Technology, Inc. · US
Beijing E-Town Semiconductor Technology Co., Ltd. · CN

Inventors

Alexandr Cosceev · Lonsee, DE
Markus Hagedorn · Ulm, DE
Christian Pfahler · Ulm, DE

Key dates

Filing date	Dec 14, 2016
Grant date	Sep 8, 2020
Priority date	—
Expiry date	Jan 28, 2039

Classification

Technology area (CPC F)Mechanical Engineering; Lighting; Heating
CPC primaryF27B5/16
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.