Method for forming semiconductor device structure with conductive line
US10770401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2019 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Dec 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The method includes forming a second mask layer over a first top surface of the first mask layer, the inner wall, and the bottom surface. The method includes removing the second mask layer covering the bottom surface to form a second trench in the second mask layer. The method includes forming an anti-bombardment layer over a second top surface of the second mask layer. The second mask layer and the anti-bombardment layer are made of different materials. The method includes removing the first portion, the first mask layer, the second mask layer, and the anti-bombardment layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.