Yuehui Yu
5Patents
2h-index
14Co-inventors
40Inventor score
Filing activity: Sep 7, 2010 → Jul 1, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8377755B2 | Method for fabricating SOI high voltage power chip with trenches | Electricity | 3 | Active |
| US8460976B2 | Manufacturing method of SOI high-voltage power device | Electricity | 2 | Active |
| US8354330B2 | Method of fabricating SOI super-junction LDMOS structure capable of completely eliminating substrate-assisted depletion effects | Electricity | 1 | Active |
| US10608014B2 | Battery management chip circuit on the base of silicon on insulator (SOI) process | Emerging Cross-Sectional Technologies | 0 | Active |
| US10770556B2 | Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.