Methods of fabricating dual threshold voltage devices
US10770561B2 · kind B2 · utility
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76References
15Claims
0Family size
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Key dates
| Filing date | Jan 29, 2019 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Jan 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An annular device is provided. The annular device includes a first transistor including a first input terminal and a second transistor including a second input terminal. The first input terminal and the second input terminal extend radially outward from the annular device, and wherein the first input terminal is aligned with the second input terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.