Epitaxial gallium nitride based light emitting diode and method of making thereof

US10770620B2 · kind B2 · utility

Assignee

• GLO AB · SE

Inventors

• Zhen Chen · Stanford, US
• Fariba Danesh · Los Altos Hills, US
• Fan Ren · Gainesville, US
• Shuke YAN · San Jose, US

Key dates

• Filing date: May 6, 2019
• Grant date: Sep 8, 2020
• Expiry date: May 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364

Abstract

A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.