Patent · US Active

Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy

US10773282B2 · kind B2 · utility

37Cited by

47References

16Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Brian J. Coppa · Eagle, US
Deepak Vedhachalam · Boise, US
Francois C. Dassapa · Fremont, US

Key dates

Filing date	Mar 24, 2017
Grant date	Sep 15, 2020
Priority date	—
Expiry date	Feb 28, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/335
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.