Method and system for inspecting an EUV mask
US10775325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2018 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Sep 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2813
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.