Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition
US10777412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2018 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Apr 2, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/847
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M—O—C bond or an M—C bond, where M is a metal element, O is oxygen, and C is carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.