Gas-controlled bonding platform for edge defect reduction during wafer bonding
US10777433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2018 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Jul 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/37001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer bonding method includes placing a first wafer on a first bonding framework including a plurality of outlet holes around a periphery of the first bonding framework. A second wafer is placed on a second bonding framework that includes a plurality of inlet holes around a periphery of the second bonding framework. The first bonding framework is in overlapping relation to the second bonding framework such that a gap exist between the first wafer and the second wafer. A gas stream is circulated through the gap between the first wafer and the second wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the first wafer and the second wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.