Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor-on-insulator type
US10777447B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2017 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Mar 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for determining a suitable implanting energy of at least two atomic species in a donor substrate to create a weakened zone defining a monocrystalline semiconductor layer to be transferred onto a receiver substrate, comprises the following steps:(i) forming a dielectric layer on at least one of the donor substrate and the receiver substrate;(ii) co-implanting the species in the donor substrate;(iii) bonding the donor substrate on the receiver substrate;(iv) detaching the donor substrate along the weakened zone to transfer the monocrystalline semiconductor layer and recover the remainder of the donor substrate;(v) inspecting the peripheral crown of the remainder of the donor substrate, or of the receiver substrate on which the monocrystalline semiconductor layer was transferred at step (iv);(vi) if the crown exhibits zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is too high;(vii) if said the crown does not exhibit zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is suitable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.