Ludovic Ecarnot
23Patents
3h-index
35Co-inventors
59Inventor score
Filing activity: Sep 25, 2003 → Feb 4, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6962858B2 | Method for reducing free surface roughness of a semiconductor wafer | Electricity | 24 | Expired |
| US7138344B2 | Method for minimizing slip line faults on a semiconductor wafer surface | Electricity | 3 | Expired |
| US7883628B2 | Method of reducing the surface roughness of a semiconductor wafer | Electricity | 3 | Active |
| US7892861B2 | Method for fabricating a compound-material wafer | Electricity | 2 | Active |
| US7749910B2 | Method of reducing the surface roughness of a semiconductor wafer | Electricity | 2 | Active |
| US10777447B2 | Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor-on-insulator type | Electricity | 1 | Active |
| US8389412B2 | Finishing method for a silicon on insulator substrate | Electricity | 1 | Active |
| US11282889B2 | Substrate for a front-side-type image sensor and method for producing such a substrate | Emerging Cross-Sectional Technologies | 1 | Active |
| US8962492B2 | Method to thin a silicon-on-insulator substrate | Electricity | 1 | Active |
| US10703627B2 | Methods of fabricating semiconductor structures including cavities filled with a sacrificial material | Electricity | 0 | Active |
| US11876020B2 | Method for manufacturing a CFET device | Electricity | 0 | Active |
| US12344524B2 | Methods of fabricating semiconductor structures including cavities filled with a sacrificial material | Electricity | 0 | Active |
| US9768057B2 | Method for transferring a layer from a single-crystal substrate | Electricity | 0 | Active |
| US12100727B2 | Method for manufacturing a substrate for a front-facing image sensor | Electricity | 0 | Active |
| US12148755B2 | Front-side-type image sensor | Electricity | 0 | Active |
| US12198975B2 | Semiconductor on insulator structure for a front side type imager | Electricity | 0 | Active |
| US11127624B2 | Method of manufacturing a semiconductor on insulator type structure, notably for a front side type imager | Electricity | 0 | Active |
| US10163682B2 | Methods of forming semiconductor structures | Electricity | 0 | Active |
| US11114314B2 | Method for fabrication of a semiconductor structure including an interposer free from any through via | Electricity | 0 | Active |
| US11127775B2 | Substrate for front side type imager and method of manufacturing such a substrate | Electricity | 0 | Active |
| US11855120B2 | Substrate for a front-side-type image sensor and method for producing such a substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US12417942B2 | Process for hydrophilically bonding substrates | Electricity | 0 | Active |
| US11205702B2 | Method for manufacturing a structure for forming a tridimensional monolithic integrated circuit | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.