Photosensitive detector with self-aligned 3D junction and gate
US10777701B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Aug 28, 2018 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Aug 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1223
Abstract
A photosensitive transistor device, on a semiconductor on insulator substrate, the photosensitive zone being formed in a substrate support layer and being arranged so that the concentration of photogenerated charges in the photosensitive zone can be increased towards a given zone facing the channel zone of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.