Method and apparatus for determining etch process parameters
US10784174B2 · kind B2 · utility
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12References
14Claims
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Key dates
| Filing date | Oct 13, 2017 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Oct 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for processing a substrate in a processing chamber using at least one time trace based prediction model is provided. A substrate is dry processed, where the dry processing creates at least one gas by-product. A concentration of the at least one gas by-product is measured. A time trace of the concentration of the at least one gas by-product is determined. The determined time trace of the concentration is provided as input for the at least one time trace based prediction model to obtain at least one process output. The at least one process output is used to adjust at least one process parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.