Luc Albarede
19Patents
5h-index
19Co-inventors
59Inventor score
Filing activity: Dec 12, 2008 → Dec 10, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9337000B2 | Control of impedance of RF return path | Electricity | 26 | Active |
| US9401264B2 | Control of impedance of RF delivery path | Electricity | 14 | Active |
| US10134569B1 | Method and apparatus for real-time monitoring of plasma chamber wall condition | Physics | 13 | Active |
| US10249476B2 | Control of impedance of RF return path | Electricity | 9 | Active |
| US9119283B2 | Chamber matching for power control mode | Electricity | 7 | Active |
| US10157730B2 | Control of impedance of RF delivery path | Electricity | 5 | Active |
| US8473089B2 | Methods and apparatus for predictive preventive maintenance of processing chambers | Electricity | 4 | Active |
| US9735069B2 | Method and apparatus for determining process rate | Electricity | 4 | Active |
| US9107284B2 | Chamber matching using voltage control mode | Electricity | 2 | Active |
| US10302553B2 | Gas exhaust by-product measurement system | Electricity | 2 | Active |
| US10903050B2 | Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity | Electricity | 2 | Active |
| US8618807B2 | Arrangement for identifying uncontrolled events at the process module level and methods thereof | Physics | 1 | Active |
| US8164353B2 | RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber | Emerging Cross-Sectional Technologies | 1 | Active |
| US10504704B2 | Plasma etching systems and methods using empirical mode decomposition | Electricity | 0 | Active |
| US9548189B2 | Plasma etching systems and methods using empirical mode decomposition | Electricity | 0 | Active |
| US10930478B2 | Apparatus with optical cavity for determining process rate | Electricity | 0 | Active |
| US10784174B2 | Method and apparatus for determining etch process parameters | Electricity | 0 | Active |
| US11056322B2 | Method and apparatus for determining process rate | Electricity | 0 | Active |
| US8894804B2 | Plasma unconfinement sensor and methods thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.