Patent · US Active

Semiconductor devices having 3-dimensional inductive structures

US10784192B2 · kind B2 · utility

1Cited by
0References
20Claims
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Assignee

Inventors

Key dates

Filing dateNov 7, 2018
Grant dateSep 22, 2020
Priority date—
Expiry dateNov 7, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/20
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices having inductive structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a substrate and at least one circuit component coupled to the substrate. The semiconductor device can further include an inductive structure carried by the substrate and having a stack of alternating first and second layers. In some embodiments, the first layers comprise an oxide material and the second layers each include a coil of conductive material. The coils of conductive material can be electrically coupled (a) together to form an inductor and (b) to the at least one circuit component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.