Semiconductor device with partial EMI shielding removal using laser ablation
US10784210B2 · kind B2 · utility
5Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2018 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Jan 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.