Method of manufacturing a capacitor
US10784334B2 · kind B2 · utility
2Cited by
10References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 12, 2018 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Sep 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/714
Abstract
The present invention discloses a method of manufacturing a capacitor, which includes the steps of forming a capacitor recess in a sacrificial layer, wherein the sidewall of capacitor recess has a wave profile, forming a bottom electrode layer on the sidewall of capacitor recess, filling up the capacitor recess with a supporting layer, removing the sacrificial layer to forma capacitor pillar made up by the bottom electrode layer and the supporting layer, forming a capacitor dielectric layer on the capacitor pillar, and forming a top electrode layer on the capacitor dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.