Single diffusion breaks formed with liner protection for source and drain regions
US10784342B1 · kind B1 · utility
5Cited by
5References
17Claims
0Family size
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Key dates
| Filing date | Apr 16, 2019 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Apr 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures that include a single diffusion break and methods of forming a single diffusion break. A source/drain region is arranged inside a first cavity in a semiconductor fin, and a dielectric layer is arranged inside a second cavity in the semiconductor fin. A liner, which is composed of a dielectric material, includes a section that is arranged inside the second cavity laterally between the dielectric layer and the source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.