Precessional spin current magnetic tunnel junction devices and methods of manufacture
US10784439B2 · kind B2 · utility
0Cited by
201References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
A Magnetic Tunnel Junction (MTJ) device can include a second Precessional Spin Current (PSC) magnetic layer of Ruthenium (Re) having a predetermined thickness and a predetermined smoothness. An etching process for smoothing the PSC magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.