Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof
US10788547B2 · kind B2 · utility
22Cited by
98References
20Claims
0Family size
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Key dates
| Filing date | Jan 17, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Mar 31, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/56
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory device includes a magnetic-exchange-coupled layer stack containing a free layer, a reference layer and an electrically conductive, non-magnetic interlayer exchange coupling layer located between the free layer and the reference layer, and an insulating spacer layer located in a series connection with the magnetic-exchange-coupled layer stack between a first electrode and a second electrode. The first electrode and the second electrode are configured to provide a programming voltage across the magnetic-exchange-coupled layer stack and the insulating spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.