Temperature compensation in memory sensing
US10790029B2 · kind B2 · utility
0Cited by
7References
17Claims
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Key dates
| Filing date | Aug 24, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Oct 13, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/145
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.