Erwin E. Yu
24Patents
3h-index
30Co-inventors
59Inventor score
Filing activity: May 15, 2006 → Jul 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7663925B2 | Method and apparatus for programming flash memory | Physics | 11 | Active |
| US9633744B2 | On demand knockout of coarse sensing based on dynamic source bounce detection | Physics | 3 | Active |
| US9842655B2 | Reducing verification checks when programming a memory device | Physics | 3 | Active |
| US10127988B2 | Temperature compensation in memory sensing | Physics | 3 | Active |
| US11335412B2 | Managing sub-block erase operations in a memory sub-system | Physics | 2 | Active |
| US7974129B2 | Method and apparatus for programming flash memory | Physics | 2 | Active |
| US10163500B1 | Sense matching for hard and soft memory reads | Physics | 2 | Active |
| US10049759B2 | Reducing verification checks when programming a memory device | Physics | 1 | Active |
| US8179726B2 | Method and apparatus for programming flash memory | Physics | 1 | Active |
| US11562791B1 | Memory devices with four data line bias levels | Physics | 1 | Active |
| US11749353B2 | Managing sub-block erase operations in a memory sub-system | Physics | 1 | Active |
| US11532367B2 | Managing programming convergence associated with memory cells of a memory sub-system | Physics | 1 | Active |
| US11442091B2 | Apparatus and methods for determination of capacitive and resistive characteristics of access lines | Electricity | 1 | Active |
| US11862257B2 | Managing programming convergence associated with memory cells of a memory sub-system | Physics | 0 | Active |
| US12101932B2 | Microelectronic devices, and related memory devices and electronic systems | Performing Operations; Transporting | 0 | Active |
| US11557351B2 | Sense circuit to sense two states of a memory cell | Physics | 0 | Active |
| US12183396B2 | Memory array structures and methods of forming memory array structures | Physics | 0 | Active |
| US12171096B2 | Microelectronic devices, and related memory devices and electronic systems | Physics | 0 | Active |
| US10790029B2 | Temperature compensation in memory sensing | Physics | 0 | Active |
| US11942159B2 | Selective management of erase operations in memory devices that enable suspend commands | Physics | 0 | Active |
| US12276686B2 | Apparatus for determination of capacitive and resistive characteristics of access lines | Physics | 0 | Active |
| US12068037B2 | Managing sub-block erase operations in a memory sub-system | Physics | 0 | Active |
| US11915758B2 | Memory devices with four data line bias levels | Physics | 0 | Active |
| US11557341B2 | Memory array structures and methods for determination of resistive characteristics of access lines | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.