Method of manufacturing semiconductor device
US10790135B2 · kind B2 · utility
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2References
8Claims
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Assignee
Inventors
Key dates
| Filing date | Oct 19, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Oct 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of manufacturing a semiconductor device by performing a process on a substrate, comprising: forming a sacrificial film made of a polymer having a urea bond on a surface of the substrate by supplying a precursor for polymerization onto the surface of the substrate; subsequently, performing a step of changing a sectional shape of the sacrificial film and a step of adjusting a film thickness of the sacrificial film by heating the sacrificial film; subsequently, performing the process on the surface of the substrate; and subsequently, removing the sacrificial film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.