Selective removal process to create high aspect ratio fully self-aligned via
US10790191B2 · kind B2 · utility
1Cited by
32References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | May 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to minimize bowing of the side walls during metal recess in a fully self-aligned via. The cap layer can be selectively removed, thus increasing the aspect ratio, by exposing the substrate to a hot phosphoric acid solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.