He Ren
64Patents
8h-index
121Co-inventors
77Inventor score
Filing activity: Mar 15, 2013 → Feb 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8969212B2 | Dry-etch selectivity | Electricity | 182 | Active |
| US9384997B2 | Dry-etch selectivity | Electricity | 145 | Active |
| US9576810B2 | Process for etching metal using a combination of plasma and solid state sources | Electricity | 36 | Active |
| US9761489B2 | Self-aligned interconnects formed using substractive techniques | Electricity | 18 | Active |
| US10957533B2 | Methods for etching a structure for semiconductor applications | Electricity | 14 | Active |
| US10636704B2 | Seam-healing method upon supra-atmospheric process in diffusion promoting ambient | Electricity | 13 | Active |
| US10916433B2 | Methods of forming metal silicide layers and metal silicide layers formed therefrom | Electricity | 13 | Active |
| US10049927B2 | Seam-healing method upon supra-atmospheric process in diffusion promoting ambient | Electricity | 13 | Active |
| US9646876B2 | Aluminum nitride barrier layer | Electricity | 8 | Active |
| US9269563B2 | Methods for forming interconnect structure utilizing selective protection process for hardmask removal process | Electricity | 6 | Active |
| US10256144B2 | Process integration approach of selective tungsten via fill | Electricity | 4 | Active |
| US9299605B2 | Methods for forming passivation protection for an interconnection structure | Electricity | 4 | Active |
| US9640424B2 | Integrated metal spacer and air gap interconnect | Electricity | 4 | Active |
| US9508561B2 | Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications | Electricity | 4 | Active |
| US9305831B2 | Integrated metal spacer and air gap interconnect | Electricity | 4 | Active |
| US10643895B2 | Self-aligned interconnects formed using subtractive techniques | Electricity | 3 | Active |
| US10388533B2 | Process integration method to tune resistivity of nickel silicide | Electricity | 2 | Active |
| US9601431B2 | Dielectric/metal barrier integration to prevent copper diffusion | Electricity | 2 | Active |
| US10109520B2 | Methods for depositing dielectric barrier layers and aluminum containing etch stop layers | Electricity | 2 | Active |
| US10692759B2 | Methods for manufacturing an interconnect structure for semiconductor devices | Electricity | 2 | Active |
| US10685849B1 | Damage free metal conductor formation | Electricity | 1 | Active |
| US10790191B2 | Selective removal process to create high aspect ratio fully self-aligned via | Electricity | 1 | Active |
| US9299577B2 | Methods for etching a dielectric barrier layer in a dual damascene structure | Electricity | 1 | Active |
| US11164780B2 | Process integration approach for selective metal via fill | Electricity | 1 | Active |
| US10008448B2 | Dielectric/metal barrier integration to prevent copper diffusion | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.