Wafer processing method
US10790193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Apr 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a wafer in which patterns including a metal layer are formed on streets. The method includes: a step of applying a laser beam along the streets formed with the patterns to form laser processed grooves having a depth in excess of a finished thickness of the wafer while removing the patterns; a step of grinding a back surface side of the wafer to thin the wafer to the finished thickness, and to expose the laser processed grooves to the back surface of the wafer, thereby dividing the wafer into a plurality of device chips; a step of removing a crushed layer formed on the back surface side of the wafer; and a step of forming a strain layer on the back surface side of the wafer by plasma processing using an inert gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.