Patent · US Active

Fin structures

US10790198B2 · kind B2 · utility

3Cited by

6References

10Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Fuad H. Al-Amoody · Rexford, US
Yiheng Xu · Hopewell Junction, US
Rishikesh Krishnan · Poughkeepsie, US

Key dates

Filing date	Aug 8, 2018
Grant date	Sep 29, 2020
Priority date	—
Expiry date	Aug 8, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76224
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to fin structures and methods of manufacture. The structure includes: a plurality of fin structures formed of substrate material; a semiconductor material located between selected fin structures of the plurality of fin structures; and isolation regions within spaces between the plurality of fin structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.