Rishikesh Krishnan
46Patents
4h-index
81Co-inventors
62Inventor score
Filing activity: May 10, 2006 → Oct 15, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9577100B2 | FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions | Electricity | 13 | Active |
| US8581351B2 | Replacement gate with reduced gate leakage current | Electricity | 9 | Active |
| US9123826B1 | Single crystal source-drain merged by polycrystalline material | Electricity | 7 | Active |
| US7560392B2 | Electrical components for microelectronic devices and methods of forming the same | Electricity | 4 | Active |
| US9318336B2 | Non-volatile memory structure employing high-k gate dielectric and metal gate | Electricity | 4 | Active |
| US8901706B2 | Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches | Electricity | 3 | Active |
| US10790198B2 | Fin structures | Electricity | 3 | Active |
| US9312364B2 | finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Electricity | 3 | Active |
| US8236372B2 | Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials | Electricity | 3 | Active |
| US8861179B2 | Capacitors having dielectric regions that include multiple metal oxide-comprising materials | Electricity | 2 | Active |
| US8241981B1 | Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor | Electricity | 2 | Active |
| US11515427B2 | Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance | Electricity | 2 | Active |
| US10211045B1 | Microwave annealing of flowable oxides with trap layers | Electricity | 2 | Active |
| US8809176B2 | Replacement gate with reduced gate leakage current | Electricity | 2 | Active |
| US7968969B2 | Electrical components for microelectronic devices | Electricity | 2 | Active |
| US10243077B2 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Electricity | 1 | Active |
| US8310807B2 | Capacitors having dielectric regions that include multiple metal oxide-comprising materials | Electricity | 1 | Active |
| US9653534B2 | Trench metal-insulator-metal capacitor with oxygen gettering layer | Electricity | 1 | Active |
| US8012532B2 | Methods of making crystalline tantalum pentoxide | Electricity | 1 | Active |
| US8993044B2 | Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials | Electricity | 1 | Active |
| US9536985B2 | Epitaxial growth of material on source/drain regions of FinFET structure | Electricity | 1 | Active |
| US9917190B2 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Electricity | 1 | Active |
| US9373501B2 | Hydroxyl group termination for nucleation of a dielectric metallic oxide | Chemistry; Metallurgy | 1 | Active |
| US8679938B2 | Shallow trench isolation for device including deep trench capacitors | Electricity | 1 | Active |
| US9269607B2 | Wafer stress control with backside patterning | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.