Cascaded bootstrapping GaN power switch and driver
US10790811B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Aug 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A cascaded bootstrapping gate driver configured to provide quick turn-on of a high side power FET and low static current consumption. The cascaded bootstrapping gate driver includes an initial bootstrapping stage with a resistor to decrease static current consumption during transistor turn-off. A secondary bootstrapping stage is driven by the initial bootstrapping stage and includes a GaN FET transistor with a low on resistance in place of the resistor. The source terminal of the GaN FET transistor provides a gate driving voltage to the high side power switch FET. The low on-resistance of the GaN FET transistor provides quick turn-on of the high side power FET. Transistors in the cascaded bootstrapping gate driver are preferably enhancement mode GaN FETs and may be integrated into a single semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.