Inventor · Altadena, CA, US

Robert Beach

76Patents
12h-index
30Co-inventors
84Inventor score

Filing activity: Sep 15, 1980 → Aug 28, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US7382001B2 Enhancement mode III-nitride FET Electricity 56 Expired
US7465997B2 III-nitride bidirectional switch Electricity 45 Expired
US7550781B2 Integrated III-nitride power devices Emerging Cross-Sectional Technologies 35 Expired
US7759699B2 III-nitride enhancement mode devices Electricity 27 Active
US8823012B2 Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same Electricity 27 Active
US8431960B2 Dopant diffusion modulation in GaN buffer layers Electricity 25 Active
US8174048B2 III-nitride current control device and method of manufacture Electricity 24 Expired
US8404508B2 Enhancement mode GaN HEMT device and method for fabricating the same Electricity 20 Active
US7417257B2 III-nitride device with improved layout geometry Electricity 20 Active
US7649215B2 III-nitride device passivation and method Electricity 16 Expired
US8436398B2 Back diffusion suppression structures Electricity 15 Active
US7288803B2 III-nitride power semiconductor device with a current sense electrode Electricity 14 Expired
US4396102A Locking clutch assembly in a winch Emerging Cross-Sectional Technologies 12 Expired
US8890168B2 Enhancement mode GaN HEMT device Electricity 11 Active
US8350294B2 Compensated gate MISFET and method for fabricating the same Electricity 10 Active
US9607876B2 Semiconductor devices with back surface isolation Electricity 8 Active
US8441030B2 III-nitride multi-channel heterojunction interdigitated rectifier Electricity 8 Expired
US8853749B2 Ion implanted and self aligned gate structure for GaN transistors Electricity 7 Active
US7439555B2 III-nitride semiconductor device with trench structure Electricity 7 Expired
US9214461B2 GaN transistors with polysilicon layers for creating additional components Electricity 7 Active
US7728355B2 Nitrogen polar III-nitride heterojunction JFET Electricity 7 Active
US9171911B2 Isolation structure in gallium nitride devices and integrated circuits Electricity 6 Active
US10312131B2 Semiconductor devices with back surface isolation Electricity 6 Active
US4379502A Winch clutch Performing Operations; Transporting 6 Expired
US9837438B2 GaN transistors with polysilicon layers used for creating additional components Electricity 6 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.