Patent · US Active

Long range capacitive gap measurement in a wafer form sensor system

US10794681B2 · kind B2 · utility

4Cited by
4References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 4, 2018
Grant dateOct 6, 2020
Priority date—
Expiry dateNov 29, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/24578
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface. In an embodiment, the sensor wafer further comprises a first conductive pad with a first surface area, wherein the first conductive pad has a surface that is substantially coplanar with the first surface of the substrate. In an embodiment, the sensor wafer further comprises a second conductive pad with a second surface area that is smaller than the first surface area, wherein the second conductive pad has a surface that is substantially coplanar with the first surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.